This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers,relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.These types can be operated directly from integrated circuits.
rDS(ON) = 540 ohm
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
-TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”