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IRFZ44N MOSFET

Model : SWD-00005

TechshopBD, Bangladesh

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BDT40.54

10 - 99
BDT39.57Save BDT 0.97

100 +
BDT39.18Save BDT 1.36

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Summary:
Power MOSFET.

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

 

Features:

  •  Advanced Process Technology
  •  Ultra Low On-Resistance
  •  Dynamic dv/dt Rating
  •  175°C Operating Temperature
  • Fast Switching
  •  Fully Avalanche Rated
  • Gate-to-Source Voltage ± 20 V
  • Avalanche Current 25 A
  • Power Dissipation 94 W
  • Repetitive Avalanche Energy 9.4 mJ
  • Peak Diode Recovery dv/dt ƒ 5.0 V/ns
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