IRF9640 P Channel MOSFET

Model : SWD-00004

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11A, 200V, P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and as drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits. Formerly developmental type TA17522.



  • 11A, 200V
  • rDS(ON)= 0.500Ω
  • Single Pulse Avalanche Energy Rated
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance
  • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
  • Drain to Source Breakdown Voltage,  VDS: -200 V
  • Drain to Gate Voltage (RGS = 20kW), VDGR :-200 V
  • Continuous Drain Current, ID:-11A
  • Pulsed Drain Current, IDM :-44 A
  • Gate to Source Voltage, VGS: ±20 V
  • Maximum Power Dissipation, PD: 125 W
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