Silicon NPN epitaxial planar type Transistors.

Features

  • Optimum for RF amplification, oscillation, mixing, and IF stage of  FM/AM radios

  • Collector-base voltage (Emitter open) VCBO 30 V
  • Collector-emitter voltage (Base open) VCEO 20 V
  • Emitter-base voltage (Collector open) VEBO 5 V
  • Collector current IC 30 mA
  • Collector power dissipation PC 400 mW
  • Junction temperature Tj 150 °C

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