IRFZ44N MOSFET

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features:

•  Advanced Process Technology

•  Ultra Low On-Resistance

•  Dynamic dv/dt Rating

•  175°C Operating Temperature

• Fast Switching

•  Fully Avalanche Rated