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SKU: 260223005199
Brand: Made in China
Warranty: 3 Days
৳ 220.05
Category: Transistor
Additional Information
The 40N60FD2 from SC is a high-performance 600V IGBT designed for demanding power electronics applications. With a 40A continuous collector current rating and fast switching capability, this device ensures stable operation in high-voltage and high-current circuits.
Built using advanced field-stop technology, the 40N60FD2 offers low conduction loss, efficient thermal performance, and reliable switching under heavy load conditions. It is an ideal choice for engineers, repair technicians, and industrial power system designers.
Technical Specifications
| Parameter | Symbol | Rating |
|---|---|---|
| Collector-Emitter Voltage | VCES | 600V |
| Gate-Emitter Voltage | VGE | ±20V |
| Continuous Collector Current (Tc = 25°C) | IC | 40A |
| Pulsed Collector Current | ICM | 80A |
| Power Dissipation | PD | Up to 300–380W |
| Junction Temperature Range | TJ | -55 to +150 °C |

| Parameter | Symbol | Typical Value |
|---|---|---|
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.8–2.2V |
| Gate Threshold Voltage | VGE(th) | 4–6V |
| Total Gate Charge | Qg | 90–110nC |
| Input Capacitance | Cies | 1500–2000pF |
| Rise Time | tr | ~80ns |
| Fall Time | tf | ~100ns |
| Parameter | Symbol | Typical Value |
|---|---|---|
| Thermal Resistance (Junction to Case) | RthJC | ~0.4°C/W |
| Maximum Junction Temperature | Tj(max) | 150°C |
The 40N60FD2 provides excellent performance in high-frequency and high-power switching environments. With proper heatsinking, it delivers stable and efficient operation, making it suitable for both industrial and DIY power electronics projects.
This transistor is a reliable and cost-effective solution for upgrading or repairing high-voltage electronic equipment.
1 × 40N60FD2 IGBT Transistor 600V 40A
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৳ 220.05
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