Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
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TechShopBD QC Test Report (Real Scenario):
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1 Reviews
Ratings andReviews (1)
It is a counterfeit mosfet. The drain to source resistance was 1.5 ohms in all of them. I ordered 4. I also tested other mosfets to ensure it wasn't my error. Every other mosfets I tested had 0 ohm resistance across the drain-source. This one is probably a low power mosfet relabeled as an irf3710 or just damaged.
No questions have been asked for this product yet.
৳ 41.61
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