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SKU: 251210005125
Brand: Made in China
Warranty: 3 Days
৳ 65.04
Category: MOSFET
Additional Information
The IRF530 is a third-generation N-channel power MOSFET produced by Vishay Siliconix. With its fast switching capability, durable construction, low on-resistance, and budget-friendly design, it is a strong choice for various industrial and commercial power solutions. Its TO-220AB packaging makes it a preferred option for a broad range of commercial and industrial applications handling power dissipation up to about 50 W.
The IRF530 offers several important features that boost its performance and reliability in power management circuits:
| Parameter | Details |
|---|---|
| Part Number: | IRF530 |
| Type: | N-Channel Power MOSFET |
| Drain-Source Voltage (VDS): | 100 V |
| Drain-Source on-state resistance: | 0.16Ω |
| Continuous Drain Current (ID): | 14 A @ 25 °C |
| Continuous Drain Current (ID): | 10 A @ 100 °C |
| Gate-source threshold voltage (VGS(th)): | 2.0 V to 4.0 V |
| Package Type: | TO-220AB |
| Maximum power dissipation: | 88W |
| Operating junction and storage temperature range: | -55 ˚C to +175 ˚C |
| Total Gate Charge: | 26 nC |
| Pulsed drain current: | 56A |
| Peak diode recovery dv/dt: | 5.5V/ns |
The TO-220AB package consists of three standard leads -
You can access the necessary resource files and related documents directly from Vishay:
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৳ 65.04
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